MOSFETs X2
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Main switching transistor in SMPS
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低RDS(开启):低栅极电荷,DV / DT坚固性
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IGBTS. MIXA那MIXG |
Switching power supplies |
坚固的设计,具有薄晶圆技术;短路额定10微秒,低栅极电荷;低EMI和竞争低Vce(sat)
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二极管模块 SP3213那PESD |
Switching power supplies |
坚固的设计,具有薄晶圆技术;Short circuit rated for 10 μsec; low gate charge; low EMI and competitive |
Diode Arrays SP1012那SP1003那AQxx-02HTG
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Protect sensitive electronic parts from voltage transients
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Ultra-low capacitance; compact form factor; low clamping voltage, low leakage current; industry’s smallest footprint available (0201) |
TVS Diodes SMCJ.那P6KE那P6SMB |
Protect sensitive electronic components from voltage transients |
600 W peak pulse capability; glass passivated chip junction |
聚合物ESD抑制器 PGB10603那PGB10402 |
保护Wi-Fi芯片组免受用户诱导的ESD事件 |
Ultra-low capacitance; compact form factor; low leakage current; fast response |
TVS Arrays SPXX那SACB那smaj.那SMBJ.那PESD那SP3213那SM712 |
Protect ICs from ESD |
Excellent clamping capability, low capacitance of 1.0 pF per I/O |
门驱动器 IX4340 |
High side and low side gate driver forpower MOSFETs |
Capable of sourcing and sinking up to 5 A |
克拉 SJxx08xSx/SJxx08xx |
Triggers electro-mechanical relay todisengage electrical contacts during fault |
Up to 600 V capability;高达100 A的高浪涌能力 |
MOV LA那C-III那ultramov. |
保护电源单元免受交流线上的闪电和其他电压瞬变 |
可以迎接宽带浪涌specifications: 40 J – 530 J (2 mS) |